Influence of Additive N2 on O2 Plasma Ashing Process in Inductively Coupled Plasma
One Vehicle Toys of the cleaning processes in semiconductor fabrication is the ashing process using oxygen plasma, which has been normally used N2 gas as additive gas to increase the ashing rate, and it is known that the ashing rate is strongly related to the concentration of oxygen radicals measured OES.However, by performing a comprehensive exper